NPN RF BJT transistor featuring SiGe material, designed for surface mount applications. This single element transistor is housed in a 4-pin SOT-89 (TO-243-AA) plastic package with a tab, measuring 4.5mm x 2.5mm x 1.5mm. Key specifications include a maximum collector-emitter voltage of 5.5V, a maximum DC collector current of 0.4A, and a maximum power dissipation of 886mW. It offers a typical transition frequency of 10000MHz, a maximum noise figure of 1.1dB, and a maximum 1dB compression power of 24dBm, operating within a temperature range of -65°C to 150°C.
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| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-243-AA |
| Package/Case | SOT-89 |
| Package Description | Small Outline Transistor |
| Lead Shape | Flat |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.5 |
| Package Width (mm) | 2.5 |
| Package Height (mm) | 1.5 |
| Seated Plane Height (mm) | 1.5 |
| Pin Pitch (mm) | 1.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Material | SiGe |
| Type | NPN |
| Configuration | Single Dual Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 5.5V |
| Maximum Collector Base Voltage | 5.5V |
| Maximum DC Collector Current | 0.4A |
| Maximum Power Dissipation | 886mW |
| Maximum Junction Ambient Thermal Resistance | 141°C/W |
| Minimum DC Current Gain Range | 200 to 300 |
| Maximum Transition Frequency | 10000(Typ)MHz |
| Maximum Noise Figure | 1.1dB |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Maximum Power 1dB Compression | 24(Typ)dBm |
| Operational Bias Conditions | 5V/40mA |
| Typical Power Gain | 11.5(Max)dB |
| Maximum 3rd Order Intercept Point | 35.5(Typ)dBm |
| Cage Code | SAN34 |
| EU RoHS | No |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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