Automotive-grade P-channel single power MOSFET featuring a 40V drain-source breakdown voltage and a maximum continuous drain current of 100A. This device offers a low drain-source on-resistance of 5.1mΩ, a maximum power dissipation of 200W, and a high pulsed drain current capability of 300A. Constructed with silicon metal-oxide semiconductor technology, it operates within a maximum temperature of 175°C and is housed in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals. The MOSFET is RoHS and REACH SVHC compliant, with an avalanche energy rating of 550mJ.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Renesas NP100P04PDG-E1-AY datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Avalanche Energy Rating (Eas) | 550mJ |
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 100A |
| Drain Current-Max (ID) | 100A |
| Drain-source On Resistance-Max | 5.1mR |
| DS Breakdown Voltage-Min | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 200W |
| Pulsed Drain Current-Max (IDM) | 300A |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
Download the complete datasheet for Renesas NP100P04PDG-E1-AY to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
