Automotive-grade P-channel single power MOSFET featuring a 40V drain-source breakdown voltage and a maximum continuous drain current of 100A. This device offers a low drain-source on-resistance of 5.1mΩ, a maximum power dissipation of 200W, and a high pulsed drain current capability of 300A. Constructed with silicon metal-oxide semiconductor technology, it operates within a maximum temperature of 175°C and is housed in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals. The MOSFET is RoHS and REACH SVHC compliant, with an avalanche energy rating of 550mJ.
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Technical Specifications
Renesas NP100P04PDG-E1-AY technical specifications.
General
Avalanche Energy Rating (Eas)
550mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
100A
Drain Current-Max (ID)
100A
Drain-source On Resistance-Max
5.1mR
DS Breakdown Voltage-Min
40V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
200W
Pulsed Drain Current-Max (IDM)
300A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP100P04PDG-E1-AY Datasheet
Download the complete datasheet for Renesas NP100P04PDG-E1-AY to view detailed technical specifications.
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