P-channel power MOSFET featuring a -60V drain-source breakdown voltage and a maximum continuous drain current of 100A. Offers a low drain-source on-resistance of 7.8mΩ, with a maximum absolute power dissipation of 200W. Designed for switching applications, this single element silicon MOSFET utilizes metal-oxide semiconductor FET technology and is housed in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals. It operates up to a maximum temperature of 175°C and is lead-free and RoHS compliant.
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Technical Specifications
Renesas NP100P06PDG-E1-AY technical specifications.
General
Avalanche Energy Rating (Eas)
420mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
100A
Drain Current-Max (ID)
100A
Drain-source On Resistance-Max
7.8mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Lead Free
Lead Free
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
200W
Pulsed Drain Current-Max (IDM)
300A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP100P06PDG-E1-AY Datasheet
Download the complete datasheet for Renesas NP100P06PDG-E1-AY to view detailed technical specifications.
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