P-channel power MOSFET featuring a -60V drain-source breakdown voltage and a maximum continuous drain current of 100A. Offers a low drain-source on-resistance of 7.8mΩ, with a maximum absolute power dissipation of 200W. Designed for switching applications, this single element silicon MOSFET utilizes metal-oxide semiconductor FET technology and is housed in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals. It operates up to a maximum temperature of 175°C and is lead-free and RoHS compliant.
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| Avalanche Energy Rating (Eas) | 420mJ |
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 100A |
| Drain Current-Max (ID) | 100A |
| Drain-source On Resistance-Max | 7.8mR |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 200W |
| Pulsed Drain Current-Max (IDM) | 300A |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
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