P-channel power MOSFET featuring a -40V drain-source breakdown voltage and a maximum continuous drain current of 20A. This single-element silicon device offers a low drain-source on-resistance of 38mΩ and a maximum power dissipation of 38W. Designed for switching applications, it operates up to 175°C and is housed in a TO-252 small outline package with gull-wing terminals for surface mounting. The MOSFET is RoHS compliant and REACH SVHC compliant.
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Technical Specifications
Renesas NP20P04SLG-E1-AY technical specifications.
General
Avalanche Energy Rating (Eas)
40mJ
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
20A
Drain Current-Max (ID)
20A
Drain-source On Resistance-Max
38mR
DS Breakdown Voltage-Min
40V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
38W
Pulsed Drain Current-Max (IDM)
60A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP20P04SLG-E1-AY Datasheet
Download the complete datasheet for Renesas NP20P04SLG-E1-AY to view detailed technical specifications.
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