P-channel single power MOSFET featuring a -60V drain-source breakdown voltage and a maximum continuous drain current of 36A. This component offers a low drain-source on-resistance of 40mΩ, ideal for switching applications. Housed in a TO-252AA (R-PSSO-G2) surface-mount package with gull-wing terminals, it supports a maximum power dissipation of 56W and operates up to 175°C. The silicon transistor element is constructed with metal-oxide semiconductor FET technology.
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Technical Specifications
Renesas NP36P06SLG-E1-AY technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
36A
Drain Current-Max (ID)
36A
Drain-source On Resistance-Max
40mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Max Operating Temperature
175°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
56W
Pulsed Drain Current-Max (IDM)
108A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas NP36P06SLG-E1-AY Datasheet
Download the complete datasheet for Renesas NP36P06SLG-E1-AY to view detailed technical specifications.
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