This device is an N-channel power MOSFET for high-current switching in automotive applications. It is rated for 60 V drain-to-source voltage and 60 A continuous drain current, with pulsed drain current up to 240 A. The transistor is housed in a TO-252 (MP-3ZP) package and is AEC-Q101 qualified. It features a maximum on-state resistance of 7.9 mΩ at 10 V gate drive, typical input capacitance of 2400 pF, and an operating channel temperature up to 175 °C.
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Renesas NP60N06VDK technical specifications.
| Drain to Source Voltage | 60V |
| Gate to Source Voltage | ±20V |
| Drain Current (DC) | 60A |
| Drain Current (Pulse) | 240A |
| Total Power Dissipation at TC=25°C | 105W |
| Channel Temperature | 175°C |
| Storage Temperature | -55 to +175°C |
| Drain to Source On-State Resistance at VGS=10V | 7.9 maxmΩ |
| Drain to Source On-State Resistance at VGS=4.5V | 12.0 maxmΩ |
| Input Capacitance | 2400 typpF |
| Output Capacitance | 230 typpF |
| Reverse Transfer Capacitance | 80 typpF |
| Total Gate Charge | 37 typnC |
| Reverse Recovery Time | 32 typns |
| Reverse Recovery Charge | 30 typnC |
| Thermal Resistance Channel to Case | 1.43°C/W |
| Thermal Resistance Channel to Ambient | 125°C/W |
| AEC-Q101 Qualified | Yes |
| Package Mass | 1.48 typg |
