N-channel single power MOSFET featuring 55V drain-source breakdown voltage and 80A maximum drain current. Offers a low 11mΩ drain-source on-resistance and 120W maximum power dissipation. This silicon MOSFET utilizes metal-oxide semiconductor FET technology, designed for switching applications with a 200A pulsed drain current capability. Packaged in a TO-220AB configuration with through-hole mounting and tin terminal finish, it operates up to 175°C and is RoHS compliant.
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Renesas NP80N055MHE-S18-AY technical specifications.
| Avalanche Energy Rating (Eas) | 100mJ |
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 80A |
| Drain Current-Max (ID) | 80A |
| Drain-source On Resistance-Max | 11mR |
| DS Breakdown Voltage-Min | 55V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 120W |
| Pulsed Drain Current-Max (IDM) | 200A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | No |
| Terminal Finish | Tin |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
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