The NP88N03KDG-E1-AY is a single N-channel metal-oxide semiconductor MOSFET with a maximum drain current of 88A and a maximum power dissipation of 200W. It operates within a temperature range of -40°C to 175°C and is compliant with RoHS and SVHC regulations. This surface-mount device is suitable for high-power applications.
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Technical Specifications
Renesas NP88N03KDG-E1-AY technical specifications.
General
| Drain Current-Max (Abs) (ID) | 88A |
| Drain Current-Max (ID) | 88A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 175°C |
| Number of Elements | 1 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 200W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NP88N03KDG-E1-AY Datasheet
Download the complete datasheet for Renesas NP88N03KDG-E1-AY to view detailed technical specifications.
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