High-performance 512K x 8 SRAM with 55ns maximum access time. This CMOS parallel memory device features a 4194304-bit density and operates from a 2.7V to 3.6V supply, with a nominal 3V. The industrial temperature grade component is housed in a 32-lead TSSOP package with a 0.5mm terminal pitch, offering 3-state outputs and output enable functionality. It supports a maximum operating temperature of 85°C and is RoHS and REACH SVHC compliant.
Quick Jump:
Technical Specifications
Renesas R1LV0408DSA-5SI technical specifications.
General
| Access Time-Max | 55ns |
| Density | 4194304b |
| Height - Seated (Max) | 1.2mm |
| I/O Type | COMMON |
| JESD-30 Code | R-PDSO-G32 |
| Length | 11.8mm |
| Max Operating Temperature | 85°C |
| Memory Type | SRAM, |
| Memory Width | 8 |
| Min Operating Temperature | -40°C |
| Max Supply Current | 25mA |
| Number of Functions | 1 |
| Number of Words | 524288 |
| Number of Words Code | 512K |
| Organization | 512KX8 |
| Output Characteristics | 3-STATE |
| Output Enable | Yes |
| Package Body Material | Plastic |
| Package Code | TSSOP |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCHMeter |
| Parallel/Serial | PARALLEL |
| Power Supplies | 3/3.3V |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Standby Current-Max | 300uA |
| Standby Voltage-Min | 2V |
| Supply Voltage-Max (Vsup) | 3.6V |
| Supply Voltage-Min (Vsup) | 2.7V |
| Supply Voltage-Nom (Vsup) | 3V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Form | Gull Wing |
| Terminal Pitch | 0.5mm |
| Terminal Position | DUAL |
| Width | 8mm |
Compliance
| RoHS | Compliant |
Datasheet
Renesas R1LV0408DSA-5SI Datasheet
Download the complete datasheet for Renesas R1LV0408DSA-5SI to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.