High-performance 512K x 8 SRAM with 55ns maximum access time. This CMOS parallel memory device features a 4194304-bit density and operates from a 2.7V to 3.6V supply, with a nominal 3V. The industrial temperature grade component is housed in a 32-lead TSSOP package with a 0.5mm terminal pitch, offering 3-state outputs and output enable functionality. It supports a maximum operating temperature of 85°C and is RoHS and REACH SVHC compliant.
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Technical Specifications
Renesas R1LV0408DSA-5SI technical specifications.
General
Access Time-Max
55ns
Density
4194304b
Height - Seated (Max)
1.2mm
I/O Type
COMMON
JESD-30 Code
R-PDSO-G32
Length
11.8mm
Max Operating Temperature
85°C
Memory Type
SRAM,
Memory Width
8
Min Operating Temperature
-40°C
Max Supply Current
25mA
Number of Functions
1
Number of Words
524288
Number of Words Code
512K
Organization
512KX8
Output Characteristics
3-STATE
Output Enable
Yes
Package Body Material
Plastic
Package Code
TSSOP
Package Shape
Rectangular
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCHMeter
Parallel/Serial
PARALLEL
Power Supplies
3/3.3V
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Standby Current-Max
300uA
Standby Voltage-Min
2V
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Supply Voltage-Nom (Vsup)
3V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
Gull Wing
Terminal Pitch
0.5mm
Terminal Position
DUAL
Width
8mm
Compliance
RoHS
Compliant
Datasheet
Renesas R1LV0408DSA-5SI Datasheet
Download the complete datasheet for Renesas R1LV0408DSA-5SI to view detailed technical specifications.
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