High-performance 512K x 8 SRAM with 55ns maximum access time. This CMOS parallel memory device features a 4194304-bit density and operates from a 2.7V to 3.6V supply, with a nominal 3V. The industrial temperature grade component is housed in a 32-lead TSSOP package with a 0.5mm terminal pitch, offering 3-state outputs and output enable functionality. It supports a maximum operating temperature of 85°C and is RoHS and REACH SVHC compliant.
Renesas R1LV0408DSA-5SI technical specifications.
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