1M x 16 CMOS SRAM, 45ns access time, 3V/3.3V power supply, industrial temperature grade (-40°C to 85°C). This parallel SRAM features a 16-bit memory width and 1M words of storage, organized as 1M x 16. It operates with a 3-state output characteristic and is housed in a 48-pin TSSOP package with a 0.5mm terminal pitch. Surface mountable, this component offers a maximum supply current of 50mA and a standby current of 8µA.
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Technical Specifications
Renesas R1LV1616HSA-4SI technical specifications.
General
Access Time-Max
45ns
Alternate Memory Width
8
Density
16777216b
Height - Seated (Max)
1.2mm
I/O Type
COMMON
JESD-30 Code
R-PDSO-G48
Length
18.4mm
Max Operating Temperature
85°C
Memory Type
SRAM,
Memory Width
16
Min Operating Temperature
-40°C
Max Supply Current
50mA
Moisture Sensitivity Level
2
Number of Functions
1
Number of Words
1048576
Number of Words Code
1M
Organization
1MX16
Output Characteristics
3-STATE
Package Body Material
Plastic
Package Code
TSSOP
Package Equivalence Code
TSSOP48,.8,20
Package Shape
Rectangular
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCHMeter
Parallel/Serial
PARALLEL
Peak Reflow Temperature (Cel)
260°C
Power Supplies
3/3.3V
Qualification Status
Not Qualified
RoHS Compliant
Yes
Standby Current-Max
8uA
Standby Voltage-Min
1.5V
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Supply Voltage-Nom (Vsup)
3V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
Gull Wing
Terminal Pitch
0.5mm
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
20s
Width
12mm
Compliance
RoHS
Compliant
Datasheet
Renesas R1LV1616HSA-4SI Datasheet
Download the complete datasheet for Renesas R1LV1616HSA-4SI to view detailed technical specifications.
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