1M x 16 CMOS SRAM, 45ns access time, 3V/3.3V power supply, industrial temperature grade (-40°C to 85°C). This parallel SRAM features a 16-bit memory width and 1M words of storage, organized as 1M x 16. It operates with a 3-state output characteristic and is housed in a 48-pin TSSOP package with a 0.5mm terminal pitch. Surface mountable, this component offers a maximum supply current of 50mA and a standby current of 8µA.
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Technical Specifications
Renesas R1LV1616HSA-4SI technical specifications.
General
| Access Time-Max | 45ns |
| Alternate Memory Width | 8 |
| Density | 16777216b |
| Height - Seated (Max) | 1.2mm |
| I/O Type | COMMON |
| JESD-30 Code | R-PDSO-G48 |
| Length | 18.4mm |
| Max Operating Temperature | 85°C |
| Memory Type | SRAM, |
| Memory Width | 16 |
| Min Operating Temperature | -40°C |
| Max Supply Current | 50mA |
| Moisture Sensitivity Level | 2 |
| Number of Functions | 1 |
| Number of Words | 1048576 |
| Number of Words Code | 1M |
| Organization | 1MX16 |
| Output Characteristics | 3-STATE |
| Package Body Material | Plastic |
| Package Code | TSSOP |
| Package Equivalence Code | TSSOP48,.8,20 |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCHMeter |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Cel) | 260°C |
| Power Supplies | 3/3.3V |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Standby Current-Max | 8uA |
| Standby Voltage-Min | 1.5V |
| Supply Voltage-Max (Vsup) | 3.6V |
| Supply Voltage-Min (Vsup) | 2.7V |
| Supply Voltage-Nom (Vsup) | 3V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Form | Gull Wing |
| Terminal Pitch | 0.5mm |
| Terminal Position | DUAL |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Width | 12mm |
Compliance
| RoHS | Compliant |
Datasheet
Renesas R1LV1616HSA-4SI Datasheet
Download the complete datasheet for Renesas R1LV1616HSA-4SI to view detailed technical specifications.
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