Synchronous SRAM chip, 36M-bit density, featuring a 1M x 36 configuration with a 1.8V supply voltage. Offers a 0.5ns maximum access time and operates at a maximum clock rate of 167MHz with QDR architecture. Packaged in a 165-pin FBGA (17x15x1.08mm) for surface mounting, this dual-port memory component supports a 19-bit address bus and operates within a temperature range of -40°C to 85°C.
PackageFBGA
MountingSurface Mount
Quick Jump:
Technical Specifications
Renesas R1Q2A3636BBG-60I technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
165
PCB
165
Package Length (mm)
17
Package Width (mm)
15
Package Height (mm)
1.08
Seated Plane Height (mm)
1.4
Pin Pitch (mm)
1
Package Material
Plastic
Mounting
Surface Mount
Density
36Mbit
Address Bus Width
19bit
Maximum Access Time
0.5ns
Timing Type
Synchronous
Maximum Clock Rate
167MHz
Data Rate Architecture
QDR
Density in Bits
37748736bit
Maximum Operating Current
600mA
Typical Operating Supply Voltage
1.8V
Number of Bits per Word
36bit
Number of Ports
2
Number of Words
1M
Min Operating Supply Voltage
1.7V
Max Operating Supply Voltage
1.9V
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
SAN34
EU RoHS
No
HTS Code
8542320041
Schedule B
8542320040
ECCN
3A991.b.2.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas R1Q2A3636BBG-60I Datasheet
Download the complete datasheet for Renesas R1Q2A3636BBG-60I to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.