High-speed CMOS SRAM with 2M x 16 organization, offering a maximum access time of 70ns. This parallel interface memory features a 3-state output characteristic and operates from a 3V nominal supply voltage, with a range of 2.7V to 3.6V. The component is housed in a 52-pin TSOP package with a 0.4mm terminal pitch, suitable for surface mounting. Designed for industrial temperature ranges from -40°C to 85°C, it boasts a maximum supply current of 70mA and is RoHS compliant.
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Technical Specifications
Renesas R1WV3216RSD-7SI technical specifications.
General
Access Time-Max
70ns
Density
33554432b
Height - Seated (Max)
1.2mm
I/O Type
COMMON
JESD-609 Code
e2
Length
10.79mm
Max Operating Temperature
85°C
Max Supply Current
70mA
Memory Type
SRAM,
Memory Width
16
Min Operating Temperature
-40°C
Moisture Sensitivity Level
2
Number of Functions
1
Number of Words
2097152
Number of Words Code
2M
Organization
2MX16
Output Characteristics
3-STATE
Package Body Material
Plastic
Package Code
TSSOP
Package Shape
Rectangular
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCHMeter
Parallel/Serial
PARALLEL
Peak Reflow Temperature (Cel)
260°C
Power Supplies
3/3.3V
Qualification Status
Not Qualified
RoHS Compliant
Yes
Standby Voltage-Min
2V
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Supply Voltage-Nom (Vsup)
3V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Finish
Copper
Terminal Form
Gull Wing
Terminal Pitch
0.4mm
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
20s
Width
8.89mm
Compliance
RoHS
Compliant
Datasheet
Renesas R1WV3216RSD-7SI Datasheet
Download the complete datasheet for Renesas R1WV3216RSD-7SI to view detailed technical specifications.
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