N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mount applications. Features a 600V collector-emitter voltage and 20A continuous collector current. Maximum power dissipation is 52000mW. Housed in a 3-pin LDPAK(S)-1 package with gull-wing leads and a tab, measuring 10.2mm x 8.6mm x 4.44mm. Operating temperature range from -55°C to 150°C.
PackageLDPAK(S)-1
MountingSurface Mount
Quick Jump:
Technical Specifications
Renesas RJH60D1DPE-00-J3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
LDPAK(S)-1
Package Description
Large Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.2
Package Width (mm)
8.6
Package Height (mm)
4.44
Seated Plane Height (mm)
4.54
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±30V
Maximum Continuous Collector Current
20A
Maximum Power Dissipation
52000mW
Typical Collector Emitter Saturation Voltage
2.6V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJH60D1DPE-00-J3 Datasheet
Download the complete datasheet for Renesas RJH60D1DPE-00-J3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.