N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mount applications. Features a 600V collector-emitter voltage and 20A continuous collector current. Maximum power dissipation is 52000mW. Housed in a 3-pin LDPAK(S)-1 package with gull-wing leads and a tab, measuring 10.2mm x 8.6mm x 4.44mm. Operating temperature range from -55°C to 150°C.
PackageLDPAK(S)-1
MountingSurface Mount
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Technical Specifications
Renesas RJH60D1DPE-00-J3 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | LDPAK(S)-1 |
| Package Description | Large Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.2 |
| Package Width (mm) | 8.6 |
| Package Height (mm) | 4.44 |
| Seated Plane Height (mm) | 4.54 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Continuous Collector Current | 20A |
| Maximum Power Dissipation | 52000mW |
| Typical Collector Emitter Saturation Voltage | 2.6V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Renesas RJH60D1DPE-00-J3 Datasheet
Download the complete datasheet for Renesas RJH60D1DPE-00-J3 to view detailed technical specifications.
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