N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting in a TO-3P package. Features 600V collector-emitter voltage, 50A continuous collector current, and 201.6W power dissipation. Utilizes trench technology for efficient switching. Operating temperature range from -55°C to 150°C.
PackageTO-3P
MountingThrough Hole
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Technical Specifications
Renesas RJH60F0DPK-00 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-3P
Package/Case
TO-3P
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.6
Package Width (mm)
4.8
Package Height (mm)
19.8
Pin Pitch (mm)
5.45
Package Weight (g)
5
Package Material
Plastic
Mounting
Through Hole
Technology
Trench
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±30V
Maximum Continuous Collector Current
50A
Maximum Power Dissipation
201600mW
Typical Collector Emitter Saturation Voltage
1.7V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJH60F0DPK-00 Datasheet
Download the complete datasheet for Renesas RJH60F0DPK-00 to view detailed technical specifications.
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