N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting. Features a 600V collector-emitter voltage and 50A continuous collector current. This single IGBT offers a maximum power dissipation of 201.6W and a typical collector-emitter saturation voltage of 1.7V. Housed in a TO-3P package with 3 pins and a tab, it operates from -55°C to 150°C.
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Renesas RJH60F0DPK-00-T0 technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-3P |
| Package/Case | TO-3P |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.6 |
| Package Width (mm) | 4.8 |
| Package Height (mm) | 19.8 |
| Pin Pitch (mm) | 5.45 |
| Package Weight (g) | 5 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Technology | Trench |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Continuous Collector Current | 50A |
| Maximum Power Dissipation | 201600mW |
| Typical Collector Emitter Saturation Voltage | 1.7V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SAN34 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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