N-channel enhancement mode power MOSFET in an 8-pin WPAK(3) surface mount package. Features a maximum drain-source voltage of 25V and a continuous drain current of 50A. Offers a low drain-source on-resistance of 1.8mΩ at 10V. Designed with a single quad drain triple source configuration and a typical gate charge of 31nC at 4.5V. Operating temperature range from -55°C to 150°C.
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| Package/Case | WPAK(3) |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.1 |
| Package Width (mm) | 6.1 |
| Package Height (mm) | 0.85(Max) |
| Seated Plane Height (mm) | 0.85(Max) |
| Pin Pitch (mm) | 1.27 |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 25V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 50A |
| Material | Si |
| Maximum Drain Source Resistance | 1.8@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 4380@10VpF |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SAN34 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
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