N-channel enhancement mode power MOSFET in an 8-pin WPAK(3) surface mount package. Features a maximum drain-source voltage of 25V and a continuous drain current of 50A. Offers a low drain-source on-resistance of 1.8mΩ at 10V. Designed with a single quad drain triple source configuration and a typical gate charge of 31nC at 4.5V. Operating temperature range from -55°C to 150°C.
PackageWPAK(3)
MountingSurface Mount
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Technical Specifications
Renesas RJK0236DPA-00-J5A technical specifications.
General
Package/Case
WPAK(3)
Pin Count
8
PCB
8
Package Length (mm)
5.1
Package Width (mm)
6.1
Package Height (mm)
0.85(Max)
Seated Plane Height (mm)
0.85(Max)
Pin Pitch (mm)
1.27
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
25V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
50A
Material
Si
Maximum Drain Source Resistance
1.8@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
4380@10VpF
Maximum Power Dissipation
50000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Renesas RJK0236DPA-00-J5A Datasheet
Download the complete datasheet for Renesas RJK0236DPA-00-J5A to view detailed technical specifications.
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