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Technical Specifications
Renesas RJK0305DPB-02#J0 technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (ID)
30A
Drain-source On Resistance-Max
13mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
120A
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas RJK0305DPB-02#J0 Datasheet
Download the complete datasheet for Renesas RJK0305DPB-02#J0 to view detailed technical specifications.
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