This N-channel MOSFET has a minimum breakdown voltage of 30V and a maximum drain current of 30A. The device features a maximum drain-source on resistance of 13mR. It is available in a small outline rectangular package made of plastic, with a gull wing terminal form and a single terminal position. The MOSFET is suitable for switching applications and is compliant with RoHS and SVHC regulations.
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Renesas RJK0305DPB-02#J0 technical specifications.
| Case Connection | DRAIN |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 13mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 120A |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
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