The RJK0349DPA-00-J0 is a single N-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum drain current of 45A and a minimum breakdown voltage of 30V. It features a maximum on-resistance of 4.3 milliohms and a maximum power dissipation of 50 watts. The device is packaged in a rectangular shape with a small outline meter (SOM) style and is suitable for switching applications. The RJK0349DPA-00-J0 is RoHS compliant and suitable for surface mount. It has a maximum operating temperature of 150°C and a peak reflow temperature of 260°C.
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Technical Specifications
Renesas RJK0349DPA-00-J0 technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 45A |
| Drain Current-Max (ID) | 45A |
| Drain-source On Resistance-Max | 4.3mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 50W |
| Pulsed Drain Current-Max (IDM) | 180A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | No Lead |
| Terminal Position | DUAL |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas RJK0349DPA-00-J0 Datasheet
Download the complete datasheet for Renesas RJK0349DPA-00-J0 to view detailed technical specifications.
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