N-channel enhancement mode power MOSFET in an 8-pin WPAK surface-mount package. Features a 30V drain-source voltage, 50A continuous drain current, and low 2.3mOhm drain-source resistance at 10V. Designed with a single quad drain triple source configuration and silicon material, it offers a maximum power dissipation of 55000mW and operates across a temperature range of -55°C to 150°C.
Renesas RJK0379DPA-00-J53 technical specifications.
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