N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 45A continuous drain current. This single element silicon transistor is housed in an 8-pin WPAK surface-mount package with a 1.27mm pin pitch. Key electrical characteristics include a maximum drain-source resistance of 3.2 mOhm at 10V, typical gate charge of 24 nC at 4.5V, and typical input capacitance of 3350 pF at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 50W.
Renesas RJK0380DPA-00-J53 technical specifications.
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