N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 45A continuous drain current. This single element silicon transistor is housed in an 8-pin WPAK surface-mount package with a 1.27mm pin pitch. Key electrical characteristics include a maximum drain-source resistance of 3.2 mOhm at 10V, typical gate charge of 24 nC at 4.5V, and typical input capacitance of 3350 pF at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 50W.
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| Package/Case | WPAK |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.1 |
| Package Width (mm) | 6.1 |
| Package Height (mm) | 0.8(Max) |
| Seated Plane Height (mm) | 0.8(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 45A |
| Material | Si |
| Maximum Drain Source Resistance | 3.2@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 3350@10VpF |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SAN34 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
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