N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 45A continuous drain current. This single element silicon transistor is housed in an 8-pin WPAK surface-mount package with a 1.27mm pin pitch. Key electrical characteristics include a maximum drain-source resistance of 3.2 mOhm at 10V, typical gate charge of 24 nC at 4.5V, and typical input capacitance of 3350 pF at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 50W.
PackageWPAK
MountingSurface Mount
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Technical Specifications
Renesas RJK0380DPA-00-J53 technical specifications.
General
Package/Case
WPAK
Pin Count
8
PCB
8
Package Length (mm)
5.1
Package Width (mm)
6.1
Package Height (mm)
0.8(Max)
Seated Plane Height (mm)
0.8(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
45A
Material
Si
Maximum Drain Source Resistance
3.2@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
3350@10VpF
Maximum Power Dissipation
50000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Renesas RJK0380DPA-00-J53 Datasheet
Download the complete datasheet for Renesas RJK0380DPA-00-J53 to view detailed technical specifications.
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