N-channel enhancement mode silicon power MOSFET with a 30V drain-source voltage and 40A continuous drain current. Features a single quad drain triple source configuration in an 8-pin WPAK surface-mount package. Offers a low 4.5mΩ maximum drain-source resistance at 10V and a typical gate charge of 15nC at 4.5V. Operating temperature range from -55°C to 150°C with a maximum power dissipation of 45000mW.
PackageWPAK
MountingSurface Mount
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Technical Specifications
Renesas RJK0381DPA-00-J53 technical specifications.
General
Package/Case
WPAK
Pin Count
8
PCB
8
Package Length (mm)
5.1
Package Width (mm)
6.1
Package Height (mm)
0.8(Max)
Seated Plane Height (mm)
0.8(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
40A
Material
Si
Maximum Drain Source Resistance
4.5@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
2200@10VpF
Maximum Power Dissipation
45000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Renesas RJK0381DPA-00-J53 Datasheet
Download the complete datasheet for Renesas RJK0381DPA-00-J53 to view detailed technical specifications.
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