N-channel enhancement mode silicon power MOSFET with a 30V drain-source voltage and 40A continuous drain current. Features a single quad drain triple source configuration in an 8-pin WPAK surface-mount package. Offers a low 4.5mΩ maximum drain-source resistance at 10V and a typical gate charge of 15nC at 4.5V. Operating temperature range from -55°C to 150°C with a maximum power dissipation of 45000mW.
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| Package/Case | WPAK |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.1 |
| Package Width (mm) | 6.1 |
| Package Height (mm) | 0.8(Max) |
| Seated Plane Height (mm) | 0.8(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 40A |
| Material | Si |
| Maximum Drain Source Resistance | 4.5@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 2200@10VpF |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SAN34 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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