N-channel enhancement mode power MOSFET in an 8-pin WPAK(3) surface-mount package. Features a maximum drain-source voltage of 30V and a continuous drain current of 45A. Offers a low drain-source on-resistance of 2.4 mOhm at 8V gate-source voltage. Designed with a single quad drain triple source configuration and operates across a temperature range of -55°C to 150°C.
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Renesas RJK03N0DPA-00-J5A technical specifications.
| Package/Case | WPAK(3) |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.1 |
| Package Width (mm) | 6.1 |
| Package Height (mm) | 0.85(Max) |
| Seated Plane Height (mm) | 0.85(Max) |
| Pin Pitch (mm) | 1.27 |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 45A |
| Material | Si |
| Maximum Drain Source Resistance | 2.4@8VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 5280@10VpF |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SAN34 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
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