N-channel MOSFET with a 40V drain-source breakdown voltage and a maximum continuous drain current of 35A. Features a low on-resistance of 9.6mΩ and a high pulsed drain current capability of 140A. Designed for switching applications, this component offers a maximum power dissipation of 45W and an avalanche energy rating of 24.5mJ. Packaged in a rectangular, small outline LFPAK with gull wing terminals, it is surface mountable and operates up to 150°C.
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Technical Specifications
Renesas RJK0451DPB-00#J5 technical specifications.
General
Avalanche Energy Rating (Eas)
24.5mJ
Case Connection
DRAIN
Drain Current-Max (ID)
35A
Drain-source On Resistance-Max
9.6mR
DS Breakdown Voltage-Min
40V
Feedback Cap-Max (Crss)
140pF
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e4
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
45W
Pulsed Drain Current-Max (IDM)
140A
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Gold
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas RJK0451DPB-00#J5 Datasheet
Download the complete datasheet for Renesas RJK0451DPB-00#J5 to view detailed technical specifications.
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