N-channel enhancement mode power MOSFET, 40V drain-source voltage, 50A continuous drain current. Features 3.2mΩ maximum drain-source resistance at 10V, 39nC typical gate charge at 10V, and 3000pF typical input capacitance at 10V. Surface mountable in a 5-pin LFPAK package with gull-wing leads, measuring 4.9mm x 3.95mm x 1mm. Maximum power dissipation is 65000mW, with an operating temperature range of -55°C to 150°C.
PackageLFPAK
MountingSurface Mount
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Technical Specifications
Renesas RJK0456DPB-00#J5 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
LFPAK
Package/Case
LFPAK
Lead Shape
Gull-wing
Pin Count
5
PCB
4
Tab
Tab
Package Length (mm)
4.9
Package Width (mm)
3.95
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
1.27
Package Weight (g)
0.08
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
50A
Material
Si
Maximum Drain Source Resistance
3.2@10VmOhm
Typical Gate Charge @ Vgs
39@10VnC
Typical Gate Charge @ 10V
39nC
Typical Input Capacitance @ Vds
3000@10VpF
Maximum Power Dissipation
65000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Renesas RJK0456DPB-00#J5 Datasheet
Download the complete datasheet for Renesas RJK0456DPB-00#J5 to view detailed technical specifications.
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