N-channel enhancement mode power MOSFET, 60V drain-source voltage, 40A continuous drain current. Features 5-pin LFPAK surface-mount package with gull-wing leads, 1.27mm pin pitch, and 4.9mm x 3.95mm dimensions. Offers 5.6mOhm maximum drain-source resistance at 10V, 40nC typical gate charge, and 3000pF typical input capacitance. Maximum power dissipation is 65W, operating temperature range from -55°C to 150°C.
PackageLFPAK
MountingSurface Mount
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Technical Specifications
Renesas RJK0656DPB-00-J5 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
LFPAK
Package/Case
LFPAK
Lead Shape
Gull-wing
Pin Count
5
PCB
4
Tab
Tab
Package Length (mm)
4.9
Package Width (mm)
3.95
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
1.27
Package Weight (g)
0.08
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
40A
Material
Si
Maximum Drain Source Resistance
5.6@10VmOhm
Typical Gate Charge @ Vgs
40@10VnC
Typical Gate Charge @ 10V
40nC
Typical Input Capacitance @ Vds
3000@10VpF
Maximum Power Dissipation
65000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJK0656DPB-00-J5 Datasheet
Download the complete datasheet for Renesas RJK0656DPB-00-J5 to view detailed technical specifications.
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