N-channel enhancement mode silicon power MOSFET, 80V drain-source voltage, 30A continuous drain current. Features 11000 mOhm maximum drain-source resistance at 10V, 35 nC typical gate charge, and 2550 pF typical input capacitance. Surface mountable in a 5-pin LFPAK package with gull-wing leads, measuring 4.9mm x 3.95mm x 1mm. Operates from -55°C to 150°C with 60W maximum power dissipation.
PackageLFPAK
MountingSurface Mount
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Technical Specifications
Renesas RJK0855DPB-00-J5 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
LFPAK
Package/Case
LFPAK
Lead Shape
Gull-wing
Pin Count
5
PCB
4
Tab
Tab
Package Length (mm)
4.9
Package Width (mm)
3.95
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
1.27
Package Weight (g)
0.08
Package Material
Plastic
Mounting
Surface Mount
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Maximum Drain Source Voltage
80V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
30A
Material
Si
Maximum Drain Source Resistance
11000@10VmOhm
Typical Gate Charge @ Vgs
35@10VnC
Typical Gate Charge @ 10V
35nC
Typical Input Capacitance @ Vds
2550@10VpF
Maximum Power Dissipation
60000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJK0855DPB-00-J5 Datasheet
Download the complete datasheet for Renesas RJK0855DPB-00-J5 to view detailed technical specifications.
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