N-channel enhancement mode silicon power MOSFET featuring 100V drain-source voltage and 20A continuous drain current. This surface-mount transistor offers a low 22mOhm drain-source resistance at 10V Vgs and a maximum power dissipation of 55000mW. Housed in a 5-pin LFPAK package with gull-wing leads, it measures 4.9mm x 3.95mm x 1mm and operates from -55°C to 150°C.
PackageLFPAK
MountingSurface Mount
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Technical Specifications
Renesas RJK1054DPB-00-J5 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
LFPAK
Package/Case
LFPAK
Lead Shape
Gull-wing
Pin Count
5
PCB
4
Tab
Tab
Package Length (mm)
4.9
Package Width (mm)
3.95
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
1.27
Package Weight (g)
0.08
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
20A
Material
Si
Maximum Drain Source Resistance
22@10VmOhm
Typical Gate Charge @ Vgs
27@10VnC
Typical Gate Charge @ 10V
27nC
Typical Input Capacitance @ Vds
2000@10VpF
Maximum Power Dissipation
55000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Renesas RJK1054DPB-00-J5 Datasheet
Download the complete datasheet for Renesas RJK1054DPB-00-J5 to view detailed technical specifications.
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