N-channel enhancement mode silicon power MOSFET with a maximum drain-source voltage of 100V and a continuous drain current of 25A. Features a low on-resistance of 14mΩ at 10V Vgs and a typical gate charge of 41nC at 10V. This surface-mount transistor is housed in a 5-pin LFPAK package with gull-wing leads, measuring 4.9mm x 3.95mm x 1mm. It offers a maximum power dissipation of 65W and operates across a temperature range of -55°C to 150°C.
PackageLFPAK
MountingSurface Mount
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Technical Specifications
Renesas RJK1056DPB-00-J5 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
LFPAK
Package/Case
LFPAK
Lead Shape
Gull-wing
Pin Count
5
PCB
4
Tab
Tab
Package Length (mm)
4.9
Package Width (mm)
3.95
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
1.27
Package Weight (g)
0.08
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
25A
Material
Si
Maximum Drain Source Resistance
14@10VmOhm
Typical Gate Charge @ Vgs
41@10VnC
Typical Gate Charge @ 10V
41nC
Typical Input Capacitance @ Vds
3000@10VpF
Maximum Power Dissipation
65000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Renesas RJK1056DPB-00-J5 Datasheet
Download the complete datasheet for Renesas RJK1056DPB-00-J5 to view detailed technical specifications.
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