N-channel enhancement mode silicon power MOSFET with a maximum drain-source voltage of 100V and a continuous drain current of 25A. Features a low on-resistance of 14mΩ at 10V Vgs and a typical gate charge of 41nC at 10V. This surface-mount transistor is housed in a 5-pin LFPAK package with gull-wing leads, measuring 4.9mm x 3.95mm x 1mm. It offers a maximum power dissipation of 65W and operates across a temperature range of -55°C to 150°C.
PackageLFPAK
MountingSurface Mount
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Technical Specifications
Renesas RJK1056DPB-00-J5 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | LFPAK |
| Package/Case | LFPAK |
| Lead Shape | Gull-wing |
| Pin Count | 5 |
| PCB | 4 |
| Tab | Tab |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 3.95 |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Weight (g) | 0.08 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 25A |
| Material | Si |
| Maximum Drain Source Resistance | 14@10VmOhm |
| Typical Gate Charge @ Vgs | 41@10VnC |
| Typical Gate Charge @ 10V | 41nC |
| Typical Input Capacitance @ Vds | 3000@10VpF |
| Maximum Power Dissipation | 65000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Renesas RJK1056DPB-00-J5 Datasheet
Download the complete datasheet for Renesas RJK1056DPB-00-J5 to view detailed technical specifications.
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