N-channel enhancement mode power MOSFET featuring 150V drain-source voltage and 50A continuous drain current. This single element silicon transistor offers a low 42mOhm drain-source resistance at 10V gate-source voltage. Housed in a 3-pin LDPAK(L) through-hole package with a tab, it supports a maximum power dissipation of 100W and operates across a wide temperature range of -55°C to 150°C.
PackageLDPAK(L)
MountingThrough Hole
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Technical Specifications
Renesas RJK1526DPJ technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-252
Package/Case
LDPAK(L)
Package Description
Large Deca Watt Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.2
Package Width (mm)
4.44
Package Height (mm)
8.6
Seated Plane Height (mm)
11.3
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
150V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
50A
Material
Si
Maximum Drain Source Resistance
42@10VmOhm
Typical Gate Charge @ Vgs
46@10VnC
Typical Gate Charge @ 10V
46nC
Typical Input Capacitance @ Vds
1800@25VpF
Maximum Power Dissipation
100000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJK1526DPJ Datasheet
Download the complete datasheet for Renesas RJK1526DPJ to view detailed technical specifications.
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