N-channel enhancement mode power MOSFET featuring 200V drain-source voltage and 45A continuous drain current. This surface-mount device utilizes a TO-252 packaged LDPAK(S)-1 with gull-wing leads, offering a 3-pin configuration (2+Tab). Key electrical characteristics include a maximum drain-source on-resistance of 47 mOhm at 10V and a typical gate charge of 66 nC at 10V. The silicon component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 100W.
PackageLDPAK(S)-1
MountingSurface Mount
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Technical Specifications
Renesas RJK2017DPE-00-J3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
LDPAK(S)-1
Package Description
Large Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.2
Package Width (mm)
8.6
Package Height (mm)
4.44
Seated Plane Height (mm)
4.54
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
200V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
45A
Material
Si
Maximum Drain Source Resistance
47@10VmOhm
Typical Gate Charge @ Vgs
66@10VnC
Typical Gate Charge @ 10V
66nC
Typical Input Capacitance @ Vds
4800@25VpF
Maximum Power Dissipation
100000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJK2017DPE-00-J3 Datasheet
Download the complete datasheet for Renesas RJK2017DPE-00-J3 to view detailed technical specifications.
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