N-channel enhancement mode power MOSFET featuring a 200V drain-source voltage and 17A continuous drain current. This surface-mount component utilizes an 8-pin LFPAK-i package with a 1.27mm pin pitch, measuring 4.9mm x 3.95mm x 1mm. It offers a low drain-source on-resistance of 98mΩ at 10V and a typical gate charge of 27.3nC. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 30W.
PackageLFPAK-i
MountingSurface Mount
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Technical Specifications
Renesas RJK2054DPC-00-J0 technical specifications.
General
Package/Case
LFPAK-i
Pin Count
8
PCB
8
Package Length (mm)
4.9
Package Width (mm)
3.95
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
200V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
17A
Material
Si
Maximum Drain Source Resistance
98@10VmOhm
Typical Gate Charge @ Vgs
27.3@10VnC
Typical Gate Charge @ 10V
27.3nC
Typical Input Capacitance @ Vds
1700@25VpF
Maximum Power Dissipation
30000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJK2054DPC-00-J0 Datasheet
Download the complete datasheet for Renesas RJK2054DPC-00-J0 to view detailed technical specifications.
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