
N-channel enhancement mode power MOSFET featuring a 200V drain-source voltage and 17A continuous drain current. This surface-mount component utilizes an 8-pin LFPAK-i package with a 1.27mm pin pitch, measuring 4.9mm x 3.95mm x 1mm. It offers a low drain-source on-resistance of 98mΩ at 10V and a typical gate charge of 27.3nC. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 30W.
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| Package/Case | LFPAK-i |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 3.95 |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 17A |
| Material | Si |
| Maximum Drain Source Resistance | 98@10VmOhm |
| Typical Gate Charge @ Vgs | 27.3@10VnC |
| Typical Gate Charge @ 10V | 27.3nC |
| Typical Input Capacitance @ Vds | 1700@25VpF |
| Maximum Power Dissipation | 30000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SAN34 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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