N-channel Power MOSFET, 450V drain-source voltage, 14A continuous drain current. Features 510mΩ maximum drain-source resistance at 10V, 29nC typical gate charge at 10V, and 1100pF typical input capacitance at 25V. Housed in a 3-pin LDPAK(S)-1 (TO-252) surface-mount package with gull-wing leads and a tab. Maximum power dissipation is 100W, operating temperature range from -55°C to 150°C.
PackageLDPAK(S)-1
MountingSurface Mount
Quick Jump:
Technical Specifications
Renesas RJK4512DPE-00#J3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
LDPAK(S)-1
Package Description
Large Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.2
Package Width (mm)
8.6
Package Height (mm)
4.44
Seated Plane Height (mm)
4.54
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
450V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
14A
Maximum Drain Source Resistance
510@10VmOhm
Typical Gate Charge @ Vgs
29@10VnC
Typical Gate Charge @ 10V
29nC
Typical Input Capacitance @ Vds
1100@25VpF
Maximum Power Dissipation
100000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJK4512DPE-00#J3 Datasheet
Download the complete datasheet for Renesas RJK4512DPE-00#J3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.