N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 6A continuous drain current. This single-element silicon transistor is housed in a surface-mount LDPAK(S)-1 (TO-252) package with gull-wing leads and a tab for enhanced thermal performance. Key specifications include a maximum gate-source voltage of ±30V, 1700mOhm drain-source resistance at 10V, and a maximum power dissipation of 62.5W. Operating temperature range is -55°C to 150°C.
PackageLDPAK(S)-1
MountingSurface Mount
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Technical Specifications
Renesas RJK5026DPE-00-J3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
LDPAK(S)-1
Package Description
Large Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.2
Package Width (mm)
8.6
Package Height (mm)
4.44
Seated Plane Height (mm)
4.54
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
6A
Material
Si
Maximum Drain Source Resistance
1700@10VmOhm
Typical Gate Charge @ Vgs
14@10VnC
Typical Gate Charge @ 10V
14nC
Typical Input Capacitance @ Vds
440@25VpF
Maximum Power Dissipation
62500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJK5026DPE-00-J3 Datasheet
Download the complete datasheet for Renesas RJK5026DPE-00-J3 to view detailed technical specifications.
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