N-channel enhancement mode power MOSFET featuring a 600V drain-source voltage and 11A continuous drain current. This single-element transistor is housed in a 3-pin LDPAK(S)-1 (TO-252) surface-mount package with gull-wing leads. Key specifications include a maximum gate-source voltage of 30V, a low drain-source on-resistance of 700mΩ at 10V, and a typical gate charge of 37.5nC. The plastic package measures 10.2mm x 8.6mm x 4.44mm, supporting a maximum power dissipation of 100W and operating temperatures from -55°C to 150°C.
Renesas RJK6013DPE-00#J3 technical specifications.
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