N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 21A continuous drain current. This single-element silicon transistor is housed in a TO-3P through-hole package with 3 pins and a tab, measuring 15.6mm x 4.8mm x 18.9mm with a 5.45mm pin pitch. Key specifications include a maximum gate-source voltage of ±30V, a maximum drain-source on-resistance of 360mΩ at 10V, and a maximum power dissipation of 150W. Operating temperature range is from -55°C to 150°C.
PackageTO-3P
MountingThrough Hole
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Technical Specifications
Renesas RJK6015DPK-00-T0 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-3P
Package/Case
TO-3P
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.6
Package Width (mm)
4.8
Package Height (mm)
18.9
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
21A
Material
Si
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Resistance
360@10VmOhm
Typical Gate Charge @ Vgs
67@10VnC
Typical Gate Charge @ 10V
67nC
Typical Input Capacitance @ Vds
2600@25VpF
Maximum Power Dissipation
150000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJK6015DPK-00-T0 Datasheet
Download the complete datasheet for Renesas RJK6015DPK-00-T0 to view detailed technical specifications.
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