N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 21A continuous drain current. This single-element silicon transistor is housed in a TO-3P through-hole package with 3 pins and a tab, measuring 15.6mm x 4.8mm x 18.9mm with a 5.45mm pin pitch. Key specifications include a maximum gate-source voltage of ±30V, a maximum drain-source on-resistance of 360mΩ at 10V, and a maximum power dissipation of 150W. Operating temperature range is from -55°C to 150°C.
PackageTO-3P
MountingThrough Hole
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Technical Specifications
Renesas RJK6015DPK-00-T0 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-3P |
| Package/Case | TO-3P |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.6 |
| Package Width (mm) | 4.8 |
| Package Height (mm) | 18.9 |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 21A |
| Material | Si |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 360@10VmOhm |
| Typical Gate Charge @ Vgs | 67@10VnC |
| Typical Gate Charge @ 10V | 67nC |
| Typical Input Capacitance @ Vds | 2600@25VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Renesas RJK6015DPK-00-T0 Datasheet
Download the complete datasheet for Renesas RJK6015DPK-00-T0 to view detailed technical specifications.
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