N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 0.8A continuous drain current. This single-element silicon transistor is housed in a 3-pin LDPAK(S)-1 (TO-252) surface-mount package with gull-wing leads. Key specifications include a maximum power dissipation of 25W and a drain-source on-resistance of 17500 mOhm at 10V. Operating temperature range is -55°C to 150°C.
PackageLDPAK(S)-1
MountingSurface Mount
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Technical Specifications
Renesas RJK6025DPE-00-J3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
LDPAK(S)-1
Package Description
Large Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.2
Package Width (mm)
8.6
Package Height (mm)
4.44
Seated Plane Height (mm)
4.54
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
0.8A
Material
Si
Maximum Drain Source Resistance
17500@10VmOhm
Typical Gate Charge @ Vgs
5@10VnC
Typical Gate Charge @ 10V
5nC
Typical Input Capacitance @ Vds
71.5@25VpF
Maximum Power Dissipation
25000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJK6025DPE-00-J3 Datasheet
Download the complete datasheet for Renesas RJK6025DPE-00-J3 to view detailed technical specifications.
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