N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 0.8A continuous drain current. This single-element silicon transistor is housed in a 3-pin LDPAK(S)-1 (TO-252) surface-mount package with gull-wing leads. Key specifications include a maximum power dissipation of 25W and a drain-source on-resistance of 17500 mOhm at 10V. Operating temperature range is -55°C to 150°C.
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Renesas RJK6025DPE-00-J3 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | LDPAK(S)-1 |
| Package Description | Large Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.2 |
| Package Width (mm) | 8.6 |
| Package Height (mm) | 4.44 |
| Seated Plane Height (mm) | 4.54 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 0.8A |
| Material | Si |
| Maximum Drain Source Resistance | 17500@10VmOhm |
| Typical Gate Charge @ Vgs | 5@10VnC |
| Typical Gate Charge @ 10V | 5nC |
| Typical Input Capacitance @ Vds | 71.5@25VpF |
| Maximum Power Dissipation | 25000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SAN34 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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