N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 0.8A continuous drain current. This single-element silicon transistor is housed in a 3-pin LDPAK(S)-1 (TO-252) surface-mount package with gull-wing leads. Key specifications include a maximum power dissipation of 25W and a drain-source on-resistance of 17500 mOhm at 10V. Operating temperature range is -55°C to 150°C.
Renesas RJK6025DPE-00-J3 technical specifications.
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