N-channel power MOSFET with 600V drain-source voltage and 16A continuous drain current. Features a 3-pin LDPAK(S)-1 package with gull-wing leads for surface mounting. Offers 290mOhm maximum drain-source resistance at 10V and 17.5nC typical gate charge. Operates across a -55°C to 150°C temperature range with 104.1W maximum power dissipation.
Renesas RJK60S4DPE-00#J3 technical specifications.
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