N-channel power MOSFET with 600V drain-source voltage and 16A continuous drain current. Features a 3-pin LDPAK(S)-1 package with gull-wing leads for surface mounting. Offers 290mOhm maximum drain-source resistance at 10V and 17.5nC typical gate charge. Operates across a -55°C to 150°C temperature range with 104.1W maximum power dissipation.
PackageLDPAK(S)-1
MountingSurface Mount
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Technical Specifications
Renesas RJK60S4DPE-00#J3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
LDPAK(S)-1
Package Description
Large Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.2
Package Width (mm)
8.6
Package Height (mm)
4.44
Seated Plane Height (mm)
4.54
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SJMOS
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
30V
Maximum Continuous Drain Current
16A
Maximum Drain Source Resistance
290@10VmOhm
Typical Gate Charge @ Vgs
17.5@10VnC
Typical Gate Charge @ 10V
17.5nC
Typical Input Capacitance @ Vds
1020@25VpF
Maximum Power Dissipation
104100mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJK60S4DPE-00#J3 Datasheet
Download the complete datasheet for Renesas RJK60S4DPE-00#J3 to view detailed technical specifications.
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