N-channel Power MOSFET featuring 600V drain-source voltage and 20A continuous drain current. This single, enhancement-mode MOSFET utilizes SJMOS process technology and is housed in a 3-pin LDPAK(S)-1 surface-mount package with gull-wing leads. Key specifications include a maximum gate-source voltage of 30V, 178mOhm drain-source resistance at 10V, and a typical gate charge of 27nC. Maximum power dissipation is rated at 125W, with an operating temperature range of -55°C to 150°C.
PackageLDPAK(S)-1
MountingSurface Mount
Quick Jump:
Technical Specifications
Renesas RJK60S5DPE-00#J3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
LDPAK(S)-1
Package Description
Large Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.2
Package Width (mm)
8.6
Package Height (mm)
4.44
Seated Plane Height (mm)
4.54
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SJMOS
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
30V
Maximum Continuous Drain Current
20A
Maximum Drain Source Resistance
178@10VmOhm
Typical Gate Charge @ Vgs
27@10VnC
Typical Gate Charge @ 10V
27nC
Typical Input Capacitance @ Vds
1600@25VpF
Maximum Power Dissipation
125000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJK60S5DPE-00#J3 Datasheet
Download the complete datasheet for Renesas RJK60S5DPE-00#J3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.