
N-channel Power MOSFET featuring 600V drain-source voltage and 20A continuous drain current. This single, enhancement-mode MOSFET utilizes SJMOS process technology and is housed in a 3-pin LDPAK(S)-1 surface-mount package with gull-wing leads. Key specifications include a maximum gate-source voltage of 30V, 178mOhm drain-source resistance at 10V, and a typical gate charge of 27nC. Maximum power dissipation is rated at 125W, with an operating temperature range of -55°C to 150°C.
Renesas RJK60S5DPE-00#J3 technical specifications.
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