N-channel enhancement mode power MOSFET featuring a 600V drain-source voltage and 20A continuous drain current. This single-element transistor utilizes SJMOS process technology and is housed in a TO-220FP package with a 3-pin through-hole configuration. Key specifications include a maximum gate-source voltage of 30V, a typical gate charge of 27nC, and a maximum power dissipation of 33.7W. The plastic package measures 10.16mm x 4.7mm x 15.87mm with a 2.54mm pin pitch, operating between -55°C and 150°C.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Renesas RJK60S5DPP-E0#T2 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220FP
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.16
Package Width (mm)
4.7
Package Height (mm)
15.87
Seated Plane Height (mm)
19.05
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SJMOS
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
30V
Maximum Continuous Drain Current
20A
Maximum Drain Source Resistance
178@10VmOhm
Typical Gate Charge @ Vgs
27@10VnC
Typical Gate Charge @ 10V
27nC
Typical Input Capacitance @ Vds
1600@25VpF
Maximum Power Dissipation
33700mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJK60S5DPP-E0#T2 Datasheet
Download the complete datasheet for Renesas RJK60S5DPP-E0#T2 to view detailed technical specifications.
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