N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 20A continuous drain current. This single element transistor utilizes SJMOS process technology and is housed in a TO-247 package with 3 through-hole pins and a tab. Maximum power dissipation is 192.3W, with a typical gate charge of 27nC at 10V and input capacitance of 1600pF at 25V. Operating temperature range spans from -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Renesas RJK60S5DPQ-E0#T2 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.94
Package Width (mm)
5.02
Package Height (mm)
21.13
Seated Plane Height (mm)
25.96(max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Configuration
Single Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SJMOS
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
30V
Maximum Continuous Drain Current
20A
Maximum Drain Source Resistance
178@10VmOhm
Typical Gate Charge @ Vgs
27@10VnC
Typical Gate Charge @ 10V
27nC
Typical Input Capacitance @ Vds
1600@25VpF
Maximum Power Dissipation
192300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJK60S5DPQ-E0#T2 Datasheet
Download the complete datasheet for Renesas RJK60S5DPQ-E0#T2 to view detailed technical specifications.
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