N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 30A continuous drain current. This single-element transistor utilizes SJMOS process technology and is housed in a TO-3PSG package with through-hole mounting. Key specifications include a maximum gate-source voltage of 30V, 125mΩ drain-source resistance at 10V, and a typical gate charge of 39nC. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 227.2W.
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| Package/Case | TO-3PSG |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.6 |
| Package Width (mm) | 4.8 |
| Package Height (mm) | 18.7 |
| Seated Plane Height (mm) | 23.4 |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SJMOS |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | 30V |
| Maximum Continuous Drain Current | 30A |
| Maximum Drain Source Resistance | 125@10VmOhm |
| Typical Gate Charge @ Vgs | 39@10VnC |
| Typical Gate Charge @ 10V | 39nC |
| Typical Input Capacitance @ Vds | 2300@25VpF |
| Maximum Power Dissipation | 227200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SAN34 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
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