N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 30A continuous drain current. This single-element transistor utilizes SJMOS process technology and is housed in a TO-3PSG package with through-hole mounting. Key specifications include a maximum gate-source voltage of 30V, 125mΩ drain-source resistance at 10V, and a typical gate charge of 39nC. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 227.2W.
PackageTO-3PSG
MountingThrough Hole
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Technical Specifications
Renesas RJK60S7DPK-M0#T0 technical specifications.
General
Package/Case
TO-3PSG
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.6
Package Width (mm)
4.8
Package Height (mm)
18.7
Seated Plane Height (mm)
23.4
Pin Pitch (mm)
5.45
Mounting
Through Hole
Configuration
Single Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SJMOS
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
30V
Maximum Continuous Drain Current
30A
Maximum Drain Source Resistance
125@10VmOhm
Typical Gate Charge @ Vgs
39@10VnC
Typical Gate Charge @ 10V
39nC
Typical Input Capacitance @ Vds
2300@25VpF
Maximum Power Dissipation
227200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2002/95/EC
Datasheet
Renesas RJK60S7DPK-M0#T0 Datasheet
Download the complete datasheet for Renesas RJK60S7DPK-M0#T0 to view detailed technical specifications.
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