N-channel Power MOSFET, 600V drain-source voltage, 55A continuous drain current. Features SJMOS process technology, single dual drain configuration, and TO-3PSG package with through-hole mounting. Maximum power dissipation of 416.6W, with a low 56mOhm drain-source resistance at 10V. Operating temperature range from -55°C to 150°C.
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| Package/Case | TO-3PSG |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.6 |
| Package Width (mm) | 4.8 |
| Package Height (mm) | 18.7 |
| Seated Plane Height (mm) | 23.4 |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SJMOS |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | 30V |
| Maximum Continuous Drain Current | 55A |
| Maximum Drain Source Resistance | 56@10VmOhm |
| Typical Gate Charge @ Vgs | 82@10VnC |
| Typical Gate Charge @ 10V | 82nC |
| Typical Input Capacitance @ Vds | 5200@25VpF |
| Maximum Power Dissipation | 416600mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SAN34 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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