N-channel Power MOSFET, 600V drain-source voltage, 55A continuous drain current. Features SJMOS process technology, single dual drain configuration, and TO-3PSG package with through-hole mounting. Maximum power dissipation of 416.6W, with a low 56mOhm drain-source resistance at 10V. Operating temperature range from -55°C to 150°C.
PackageTO-3PSG
MountingThrough Hole
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Technical Specifications
Renesas RJK60S8DPK-M0#T0 technical specifications.
General
Package/Case
TO-3PSG
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.6
Package Width (mm)
4.8
Package Height (mm)
18.7
Seated Plane Height (mm)
23.4
Pin Pitch (mm)
5.45
Mounting
Through Hole
Configuration
Single Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SJMOS
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
30V
Maximum Continuous Drain Current
55A
Maximum Drain Source Resistance
56@10VmOhm
Typical Gate Charge @ Vgs
82@10VnC
Typical Gate Charge @ 10V
82nC
Typical Input Capacitance @ Vds
5200@25VpF
Maximum Power Dissipation
416600mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas RJK60S8DPK-M0#T0 Datasheet
Download the complete datasheet for Renesas RJK60S8DPK-M0#T0 to view detailed technical specifications.
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