N-channel enhancement mode silicon power MOSFET, 600V drain-source voltage, 10A continuous drain current. Features 1100mOhm maximum drain-source on-resistance at 10V. Surface mountable in a 3-pin LDPAK(S)-1 (TO-252) package with gull-wing leads. Operating temperature range from -55°C to 150°C.
Renesas RJL6012DPE-00-J3 technical specifications.
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