N-channel enhancement mode silicon power MOSFET, 600V drain-source voltage, 10A continuous drain current. Features 1100mOhm maximum drain-source on-resistance at 10V. Surface mountable in a 3-pin LDPAK(S)-1 (TO-252) package with gull-wing leads. Operating temperature range from -55°C to 150°C.
PackageLDPAK(S)-1
MountingSurface Mount
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Technical Specifications
Renesas RJL6012DPE-00-J3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
LDPAK(S)-1
Package Description
Large Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.2
Package Width (mm)
8.6
Package Height (mm)
4.44
Seated Plane Height (mm)
4.54
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
10A
Material
Si
Maximum Drain Source Resistance
1100@10VmOhm
Typical Gate Charge @ Vgs
28@10VnC
Typical Gate Charge @ 10V
28nC
Typical Input Capacitance @ Vds
1050@25VpF
Maximum Power Dissipation
100000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJL6012DPE-00-J3 Datasheet
Download the complete datasheet for Renesas RJL6012DPE-00-J3 to view detailed technical specifications.
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