Surface mount N-channel/P-channel enhancement mode silicon power MOSFETs featuring 30V drain-source voltage and 3.5A continuous drain current. These quad-configuration transistors are housed in an 8-pin SOP (Small Outline Package) with gull-wing leads, measuring 4.9mm x 3.95mm x 1.5mm. Key specifications include low on-resistance of 65mOhm (N-channel) and 120mOhm (P-channel) at 10V Vgs, with typical gate charge of 5nC (N-channel) and 6nC (P-channel). Operating temperature range is -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Renesas RJM0306JSP-00-J0 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
4.9
Package Width (mm)
3.95
Package Height (mm)
1.5(Max)
Seated Plane Height (mm)
1.75(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Jedec
MS-012AA
Configuration
Quad
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N|P
Number of Elements per Chip
4
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
3.5A
Material
Si
Maximum Drain Source Resistance
65@10V@N Channel|120@10V@P ChannelmOhm
Typical Gate Charge @ Vgs
5@10V@N Channel|6@10V@P ChannelnC
Typical Gate Charge @ 10V
5@N Channel|6@P ChannelnC
Typical Input Capacitance @ Vds
290@10V@N Channel|320@10V@P ChannelpF
Maximum Power Dissipation
2200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Renesas RJM0306JSP-00-J0 Datasheet
Download the complete datasheet for Renesas RJM0306JSP-00-J0 to view detailed technical specifications.
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