
RF MOSFET N-Channel transistor, 16V drain-source voltage, 1.2A continuous drain current, and 450MHz maximum frequency. Features single dual source configuration with enhancement mode channel. Housed in a 4-pin UPAK (Uni Watt Package) SOT lead-frame SMT package, measuring 4.5mm x 2.5mm x 1.5mm, suitable for surface mounting. Offers 9000mW maximum power dissipation and 1.5W output power.
Renesas RQA0010VXDQS#H1 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | UPAK |
| Package Description | Uni Watt Package |
| Lead Shape | Flat |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.5 |
| Package Width (mm) | 2.5 |
| Package Height (mm) | 1.5 |
| Seated Plane Height (mm) | 1.5 |
| Pin Pitch (mm) | 1.5 |
| Package Weight (g) | 0.05 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Channel Type | N |
| Configuration | Single Dual Source |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 16V |
| Maximum Continuous Drain Current | 1.2A |
| Maximum Frequency | 450MHz |
| Maximum Power Dissipation | 9000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Power Gain | 20dB |
| Output Power | 1.5W |
| Typical Input Capacitance @ Vds | 20@0VpF |
| Cage Code | SAN34 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Renesas RQA0010VXDQS#H1 to view detailed technical specifications.
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