Quick Jump:
Technical Specifications
Renesas TBB1010 technical specifications.
General
Drain Current-Max (Abs) (ID)
20mA
Drain Current-Max (ID)
30mA
DS Breakdown Voltage-Min
6V
Feedback Cap-Max (Crss)
0.05pF
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
VERY HIGH FREQUENCY BAND
JESD-30 Code
R-PDSO-G6
Max Operating Temperature
150°C
Number of Elements
2
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
250mW
Qualification Status
Not Qualified
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas TBB1010 Datasheet
Download the complete datasheet for Renesas TBB1010 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.