2A, 60V, 0.25ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SIP-10
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| Drain Current-Max (Abs) (ID) | 2A |
| Drain Current-Max (ID) | 2A |
| Drain-source On Resistance-Max | 250mR |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 150°C |
| Number of Elements | 4 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | IN-LINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 3.5W |
| Pulsed Drain Current-Max (IDM) | 8A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | No |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Time @ Peak Reflow Temperature-Max (s) | 10s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
