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Technical Specifications
Renesas UPA1717G technical specifications.
General
Drain Current-Max (ID)
6A
Drain-source On Resistance-Max
59mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
Moisture Sensitivity Level
1
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Peak Reflow Temperature (Cel)
225°C
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
24A
Qualification Status
Not Qualified
RoHS Compliant
No
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas UPA1717G Datasheet
Download the complete datasheet for Renesas UPA1717G to view detailed technical specifications.
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