The UPA1717G is a P-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum drain current of 6A and a minimum breakdown voltage of 30V. It features a maximum drain-source on resistance of 59 milliohms and a pulsed drain current of 24A. The device is packaged in a small outline, R-PDSO-G8 package, with a plastic body and a gull wing terminal form. It is suitable for switching applications and has a peak reflow temperature of 225°C.
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| Drain Current-Max (ID) | 6A |
| Drain-source On Resistance-Max | 59mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 225°C |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 24A |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Not Compliant |