The UPA1770G-E2-A is a P-channel metal-oxide semiconductor field-effect transistor with a maximum drain current of 6A and a maximum power dissipation of 2W. It operates at a maximum temperature of 150°C and is RoHS compliant. The device is surface mountable with a tin terminal finish. The JESD-609 code for this device is e6.
Quick Jump:
Technical Specifications
Renesas UPA1770G-E2-A technical specifications.
General
| Drain Current-Max (Abs) (ID) | 6A |
| Drain Current-Max (ID) | 6A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 2W |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA1770G-E2-A Datasheet
Download the complete datasheet for Renesas UPA1770G-E2-A to view detailed technical specifications.
No datasheet is available for this part.