N-channel power MOSFET featuring 30V drain-source breakdown voltage and a maximum continuous drain current of 5A. Achieves low on-resistance of 50mΩ, enabling efficient switching applications. Rated for 2W maximum power dissipation and a 20A pulsed drain current. Housed in a lead-free, surface-mount SOP-8 package with gull-wing terminals. Operates up to 150°C with a 2.5mJ avalanche energy rating.
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Renesas UPA2757GR-E2-AT technical specifications.
| Avalanche Energy Rating (Eas) | 2.5mJ |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain Current-Max (ID) | 5A |
| Drain-source On Resistance-Max | 50mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e3 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2W |
| Pulsed Drain Current-Max (IDM) | 20A |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
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